The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 25, 2024
Filed:
Mar. 23, 2022
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Jianwei Peng, Clifton Park, NY (US);
Hong Yu, Clifton Park, NY (US);
Man Gu, Malta, NY (US);
Eric S. Kozarsky, Gansevoort, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/285 (2006.01); H01L 21/3215 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/32155 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/45 (2013.01); H01L 29/4933 (2013.01);
Abstract
Semiconductor structures include a channel region, a gate dielectric on the channel region, source and drain structures on opposite sides of the channel region, and a gate conductor between the source and drain structures on the gate dielectric. The source and drain structures include source and drain silicides. The gate conductor includes a gate conductor silicide. The gate conductor silicide is thicker than the source and drain silicides.