The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2021
Filed:
Jan. 03, 2020
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Judson Holt, Ballston Lake, NY (US);
Alexander Derrickson, Troy, NY (US);
Ryan Sporer, Mechanicville, NY (US);
George R. Mulfinger, Gansevoort, NY (US);
Alexander Martin, Greenfield Center, NY (US);
Jagar Singh, Clifton Park, NY (US);
GLOBALFOUNDRIES U.S. INC., Santa Clara, CA (US);
Abstract
Structures for a heterojunction bipolar transistor and methods of forming a structure for a heterojunction bipolar transistor. A base layer is positioned in a cavity in a semiconductor layer, a first terminal is coupled to the base layer, and a second terminal is coupled to a portion of the semiconductor layer. The second terminal is laterally spaced from the first terminal, and the portion of the semiconductor layer is laterally positioned between the second terminal and the base layer.