The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 07, 2017
Filed:
Feb. 13, 2017
Globalfoundries Inc., Grand Cayman, KY;
George R. Mulfinger, Gansevoort, NY (US);
Lakshmanan H. Vanamurthy, Saratoga Springs, NY (US);
Scott Beasor, Greenwich, NY (US);
Timothy J. McArdle, Ballston Lake, NY (US);
Judson R. Holt, Ballston Lake, NY (US);
Hao Zhang, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A method for forming a self-aligned sacrificial epitaxial cap for trench silicide and the resulting device are provided. Embodiments include forming a Si fin in a PFET region and a pair of Si fins in a NFET region; forming epitaxial S/D regions; forming a spacer over the S/D region in the PFET region; forming a sacrificial cap over the S/D regions in the NFET region, merging the pair of Si fins; removing the spacer from the S/D region in the PFET region; forming silicide trenches over the S/D regions in the PFET and NEFT regions; implanting dopant into the S/D region in the PFET region while the sacrificial cap protects the S/D regions in the NFET region; removing the sacrificial cap; and forming a metal layer over top surfaces of the S/D region in the PFET region and top and bottom surfaces of the S/D regions in the NFET region.