Hao Zhang

Title: Innovations of Hao Zhang in Semiconductor Technology

Introduction

Hao Zhang is a prominent inventor based in Clifton Park, NY, known for his significant contributions to semiconductor technology. With a total of four patents to his name, he has made strides in the field that enhance the performance and efficiency of electronic devices.

Latest Patents

Hao Zhang's latest patents include a method for forming a self-aligned sacrificial epitaxial cap for trench silicide. This innovative approach involves creating a Si fin in a PFET region and a pair of Si fins in a NFET region. The process also includes forming epitaxial source/drain (S/D) regions and a spacer over the S/D region in the PFET region. Another aspect of his patent involves merging the pair of Si fins and removing the spacer from the S/D region in the PFET region. The method further details the formation of silicide trenches over the S/D regions in both PFET and NFET regions, implanting dopants into the S/D region in the PFET region while the sacrificial cap protects the S/D regions in the NFET region, and finally forming a metal layer over the top surfaces of the S/D regions.

Career Highlights

Hao Zhang is currently employed at GlobalFoundries Inc., where he continues to innovate and develop advanced semiconductor technologies. His work has been instrumental in improving the manufacturing processes and device architectures used in modern electronics.

Collaborations

Hao Zhang has collaborated with notable colleagues such as George Robert Mulfinger and Lakshmanan H Vanamurthy, contributing to a dynamic and innovative work environment.

Conclusion

Hao Zhang's contributions to semiconductor technology through his patents and collaborations highlight his role as a key inventor in the field. His innovative methods are paving the way for advancements in electronic device performance and efficiency.