The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2013
Filed:
Apr. 12, 2012
Dina Triyoso, Dresden, DE;
Hao Zhang, Dresden, DE;
Dina Triyoso, Dresden, DE;
Hao Zhang, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
Disclosed herein are various methods of forming replacement gate structures for semiconductor devices. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, removing the sacrificial gate structure to thereby define a gate cavity for a replacement gate structure, forming a gate insulation layer in the gate cavity and forming a layer of metal above the gate insulation layer. In this example, the method also includes forming a patterned etch mask layer above the metal layer that exposes substantially vertically oriented portions of the metal layer within the cavity and covers a substantially horizontally oriented portion of the metal layer within the cavity, performing an etching process through the patterned etch mask layer to reduce a thickness of the exposed substantially vertically oriented portions of the metal layer and removing the patterned etch mask layer.