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Dina Triyoso

USPTO Granted Patents = 9 (Patent Applications = 1)

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 44(Granted Patents)

Company Filing History:

Globalfoundaries Inc.

patents

Years Active: 2013-2018

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10109492 - Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD process (2018-10-23),

2. 9530833 - Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof (2016-12-27),

3. 9318315 - Complex circuit element and capacitor utilizing CMOS compatible antiferroelectric high-k materials (2016-04-19),

4. 9269785 - Semiconductor device with ferroelectric hafnium oxide and method for forming semiconductor device (2016-02-23),

5. 8791003 - Methods for fabricating integrated circuits with fluorine passivation (2014-07-29),

6. 8716149 - Methods for fabricating integrated circuits having improved spacers (2014-05-06),

7. 8652890 - Methods for fabricating integrated circuits with narrow, metal filled openings (2014-02-18),

8. 8420519 - Methods for fabricating integrated circuits with controlled P-channel threshold voltage (2013-04-16),

9. 8383473 - Methods of forming replacement gate structures for semiconductor devices (2013-02-26),

Title: The Inventive Mind of Dina Triyoso: A Pioneer in Semiconductor Technologies

Introduction:

Dina Triyoso, a remarkable inventor hailing from Dresden, Germany, has left an indelible mark in the field of semiconductor technologies. With a staggering portfolio of 9 patents to his name, Triyoso is renowned for his groundbreaking innovations in the realm of atomic layer deposition processes and semiconductor structures.

Latest Patents:

Among his latest patents is the 'Method of forming a high-quality interfacial layer for a semiconductor device by performing a low-temperature ALD process'. This method revolutionizes the deposition of silicon dioxide on germanium-containing regions of semiconductor material, paving the way for enhanced transistor device performance. Additionally, Triyoso's 'Semiconductor structure including capacitors having different capacitor dielectrics and method for the formation thereof' patent showcases his expertise in optimizing capacitor designs within semiconductor structures.

Career Highlights:

Throughout his illustrious career, Dina Triyoso has lent his expertise to esteemed companies such as GlobalFoundries Inc. His contributions have been instrumental in advancing semiconductor technologies and pushing the boundaries of innovation within the industry. With a keen eye for detail and a passion for excellence, Triyoso has consistently delivered cutting-edge solutions that have redefined the semiconductor landscape.

Collaborations:

Collaborating with talented individuals such as Elke Erben and Johannes Mueller has further amplified Triyoso's innovative prowess. Together, they have forged new pathways in semiconductor research, combining their collective expertise to develop state-of-the-art technologies that have garnered widespread acclaim within the industry.

Conclusion:

In conclusion, Dina Triyoso stands as a trailblazer in the field of semiconductor technologies, with a legacy marked by groundbreaking inventions and a relentless pursuit of innovation. His valuable contributions have not only shaped the industry but have also set a benchmark for future generations of inventors to aspire to. Triyoso's visionary work continues to inspire and drive progress in the ever-evolving world of semiconductors.

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