The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2014

Filed:

May. 29, 2012
Applicants:

Fabian Koehler, Dresden, DE;

Sergej Mutas, Dresden, DE;

Dina Triyoso, Dresden, DE;

Itasham Hussain, Dresden, DE;

Inventors:

Fabian Koehler, Dresden, DE;

Sergej Mutas, Dresden, DE;

Dina Triyoso, Dresden, DE;

Itasham Hussain, Dresden, DE;

Assignee:

GlobalFoundries, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/469 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having a gate structure. An atomic layer deposition (ALD) process is performed to deposit a spacer around the gate structure. The ALD process includes alternating flowing ionized radicals of a first precursor across the semiconductor substrate and flowing a chlorosilane precursor across the semiconductor substrate to deposit the spacer.


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