Company Filing History:
Years Active: 2014-2015
Title: Itasham Hussain: Innovator in Semiconductor Technology
Introduction
Itasham Hussain is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly in the area of gate encapsulation and film deposition processes. With a total of three patents to his name, Hussain's work is recognized for its innovative approaches to common challenges in transistor manufacturing.
Latest Patents
Hussain's latest patents include a method for gate encapsulation achieved by single-step deposition. This method addresses the issue of thickness variation in spacer structures that enclose gate electrode structures of transistors. By utilizing atomic layer deposition in two stages at different temperatures, he has developed a technique that ensures well-defined spacer thickness. Another significant patent focuses on film deposition with improved in-wafer uniformity. This method combines overheating before deposition with cooling of the reaction chamber during a second deposition stage. This innovative approach compensates for reactant gas depletion across the wafer, making it particularly useful for growing nitride layers used as hard masks during shallow trench isolation region formation.
Career Highlights
Itasham Hussain is currently employed at GlobalFoundries Inc., a leading semiconductor manufacturer. His work at the company has allowed him to apply his innovative ideas in a practical setting, contributing to advancements in semiconductor fabrication techniques.
Collaborations
Hussain has collaborated with several talented individuals in his field, including Fabian Koehler and Bianca Antonioli-Trepte. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.
Conclusion
Itasham Hussain's contributions to semiconductor technology through his patents and work at GlobalFoundries Inc. highlight his role as an influential inventor in the industry. His innovative methods for gate encapsulation and film deposition are paving the way for advancements in transistor manufacturing.