The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2018
Filed:
Feb. 25, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Gabriela Dilliway, Dresdon, DE;
Dina Triyoso, Dresden, DE;
Elke Erben, Dresden, DE;
Rimoon Agaiby, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28255 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/823807 (2013.01); H01L 21/823821 (2013.01); H01L 29/66651 (2013.01);
Abstract
One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400° C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.