Munich, Georgia

Gabriela Dilliway


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Location History:

  • Dresden, DE (2014)
  • Dresdon, DE (2018)

Company Filing History:


Years Active: 2014-2018

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2 patents (USPTO):

Title: Gabriela Dilliway: Innovator in Semiconductor Technology

Introduction

Gabriela Dilliway is a prominent inventor based in Munich, Germany. She has made significant contributions to the field of semiconductor technology, holding two patents that showcase her innovative approach to enhancing transistor performance.

Latest Patents

Her latest patents include a method of forming a high-quality interfacial layer for a semiconductor device by performing a low-temperature atomic layer deposition (ALD) process. This method involves depositing a layer of silicon dioxide on a germanium-containing region of semiconductor material at temperatures below 400°C. Additionally, she has developed a performance enhancement technique in transistors by providing a graded embedded strain-inducing semiconductor region. This approach utilizes a graded material to improve strain conditions, thereby enhancing transistor performance while minimizing lattice defects.

Career Highlights

Gabriela Dilliway works at GlobalFoundries Inc., where she applies her expertise in semiconductor manufacturing. Her innovative methods have the potential to revolutionize the efficiency and performance of modern electronic devices.

Collaborations

Some of her notable coworkers include El Mehdi Bazizi and Alban Zaka, with whom she collaborates to advance semiconductor technologies.

Conclusion

Gabriela Dilliway's contributions to semiconductor technology through her patents and work at GlobalFoundries Inc. highlight her role as a leading innovator in the field. Her advancements are paving the way for improved electronic devices and systems.

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