Globalfoundries Inc.

Gabriela Dilliway

Alban Zaka

El Mehdi Bazizi

Dina Triyoso

Elke Erben

Bo Bai

Rimoon Agaiby

One illustrative method disclosed herein includes performing an atomic layer deposition (ALD) process at a temperature of less than 400&#xb0; C. to deposit a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.

Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD process

In sophisticated semiconductor devices, transistors may be formed on the basis of an efficient strain-inducing mechanism by using an embedded strain-inducing semiconductor alloy. The strain-inducing semiconductor material may be provided as a graded material with a smooth strain transfer into the neighboring channel region in order to reduce the number of lattice defects and provide enhanced strain conditions, which in turn directly translate into superior transistor performance. The superior architecture of the graded strain-inducing semiconductor material may be accomplished by selecting appropriate process parameters during the selective epitaxial growth process without contributing to additional process complexity.

Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface

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Munich, Georgia

Gabriela Dilliway