Dresden, Germany

Rimoon Agaiby


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2018

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Rimoon Agaiby: Innovator in Semiconductor Technology

Introduction

Rimoon Agaiby is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Rimoon holds a patent titled "Method of forming a high quality interfacial layer for a semiconductor device by performing a low temperature ALD process." This patent describes an illustrative method that includes performing an atomic layer deposition (ALD) process at a temperature of less than 400°C. The process involves depositing a layer of silicon dioxide on a germanium-containing region of semiconductor material and forming a gate structure of a transistor device above the layer of silicon dioxide.

Career Highlights

Rimoon Agaiby is currently employed at GlobalFoundries Inc., a leading company in semiconductor manufacturing. His work focuses on advancing technologies that enhance the performance and efficiency of semiconductor devices.

Collaborations

Rimoon collaborates with talented coworkers, including Gabriela Dilliway and Dina Triyoso, who contribute to his projects and innovations in the semiconductor field.

Conclusion

Rimoon Agaiby is a distinguished inventor whose work in semiconductor technology continues to impact the industry positively. His innovative approaches and collaborations highlight his commitment to advancing technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…