The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2013
Filed:
Nov. 01, 2011
Applicants:
Dina Triyoso, Dresden, DE;
Elke Erben, Dresden, DE;
Klaus Hempel, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES, Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods are provided for fabricating integrated circuits having controlled threshold voltages. In accordance with one embodiment a method includes forming a gate dielectric overlying an N-doped silicon substrate and depositing a layer of titanium nitride and a layer of tantalum nitride overlying the gate dielectric. A sub-monolayer of tantalum oxide is deposited overlying the layer of tantalum nitride by a process of atomic layer deposition, and oxygen is diffused from the tantalum oxide through the tantalum nitride and titanium nitride.