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For the Inventor, By the Inventor

Dresden, Germany

Klaus Hempel

This inventor holds 22 USPTO granted patents and 5 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2008-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Klaus Hempel. Retrieved from https://idiyas.com/inventor/klaus-hempel

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 22 

% Patents Active = 54.5


Average Co-Inventor Count = 3.4

ph-index = 5

Forward Citations = 63(Granted Patents)


Company Filing History:

goldMedal20 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 13,185 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2008-2018

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Areas of Expertise:
Short-channel NFET
High-k Metal Gate
Integrated Circuits
Replacement Gate Technology
Field Effect Transistor
Drain/Source Extension
Polysilicon Removal
Trench Isolation
CMOS Transistors
Work Function Adjustment
Barrier Layer
Placeholder Material
22 patents (USPTO):Explore Patents
1. 10121665 - Short-channel NFET device (2018-11-06),
2. 9917016 - Integrated circuits and methods of forming the same with effective dummy gate cap removal (2018-03-13),
3. 9735012 - Short-channel nFET device (2017-08-15),
4. 8735270 - Method for making high-K metal gate electrode structures by separate removal of placeholder materials (2014-05-27),
5. 8735236 - High-k metal gate electrode structure formed by removing a work function on sidewalls in replacement gate technology (2014-05-27),
6. 8716120 - High-k metal gate electrode structures formed by reducing a gate fill aspect ratio in replacement gate technology (2014-05-06),
7. 8697530 - Drain/source extension structure of a field effect transistor with reduced boron diffusion (2014-04-15),
8. 8673759 - Dry etch polysilicon removal for replacement gates (2014-03-18),
9. 8664103 - Metal gate stack formation for replacement gate technology (2014-03-04),
10. 8652956 - High-k metal gate electrode structures formed by separate removal of placeholder materials using a masking regime prior to gate patterning (2014-02-18),
11. 8450163 - Semiconductor device comprising metal gates and semiconductor resistors formed on the basis of a replacement gate approach (2013-05-28),
12. 8440559 - Work function adjustment in high-K metal gate electrode structures by selectively removing a barrier layer (2013-05-14),
13. 8420519 - Methods for fabricating integrated circuits with controlled P-channel threshold voltage (2013-04-16),
14. 8367495 - Method for forming CMOS transistors having metal-containing gate electrodes formed on a high-K gate dielectric material (2013-02-05),
15. 8357575 - Technique for exposing a placeholder material in a replacement gate approach by modifying a removal rate of stressed dielectric overlayers (2013-01-22),

Title: Klaus Hempel: Innovator in Semiconductor Device Technology

Introduction

Klaus Hempel is a distinguished inventor based in Dresden, Germany, with an impressive portfolio of 22 patents. His work primarily focuses on advancements in semiconductor devices, showcasing his significant contributions to the field of integrated circuits and transistors.

Latest Patents

Among Klaus Hempel's latest inventions is a groundbreaking semiconductor device featuring a short-channel NFET. This device incorporates an active region with a specialized semiconductor layer, where a transistor includes an implanted halo region with a doping profile optimized for performance. Another notable patent involves innovative methods for forming integrated circuits, which streamline the fabrication process by effectively removing dummy gate caps while maintaining structural integrity.

Career Highlights

Hempel has had a remarkable career, significantly influencing the semiconductor industry. He has worked with major companies such as GlobalFoundries Inc. and Advanced Micro Devices Corporation. His expertise and innovative mindset have propelled advancements in technology, aiding in the development of more efficient and high-performance electronic devices.

Collaborations

Throughout his career, Klaus has collaborated with esteemed professionals in the industry, including Sven Beyer and Markus Lenski. These partnerships have fostered a creative environment where innovative ideas can thrive, resulting in several patents that push the boundaries of semiconductor technology.

Conclusion

Klaus Hempel's contributions to the semiconductor field are both impactful and inspiring. With his extensive patent portfolio and collaborations, he continues to drive innovation in integrated circuit technology. His work exemplifies the importance of inventors in shaping the future of electronics and technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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