The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 2018
Filed:
Jul. 11, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Chi Dong Nguyen, Radebeul, DE;
Klaus Hempel, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 29/1083 (2013.01); H01L 29/6659 (2013.01); H01L 21/26513 (2013.01); H01L 29/6656 (2013.01);
Abstract
A semiconductor device has an active region that includes a semiconductor layer. A transistor is formed in and above the active region, wherein the transistor has an implanted halo region that includes a halo dopant species and defines a halo dopant profile in the semiconductor layer. An implanted carbon species is positioned in the semiconductor layer, wherein the implanted carbon species defines a carbon species profile in the semiconductor layer that is substantially the same as the halo dopant profile of the implanted halo region in the semiconductor layer.