The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 28, 2013

Filed:

Dec. 08, 2010
Applicants:

Sven Beyer, Dresden, DE;

Klaus Hempel, Dresden, DE;

Roland Stejskal, Freital, DE;

Andy Wei, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Andreas Kurz, Dresden, DE;

Uwe Griebenow, Markleeberg, DE;

Jan Hoentschel, Dresden, DE;

Inventors:

Sven Beyer, Dresden, DE;

Klaus Hempel, Dresden, DE;

Roland Stejskal, Freital, DE;

Andy Wei, Dresden, DE;

Thilo Scheiper, Dresden, DE;

Andreas Kurz, Dresden, DE;

Uwe Griebenow, Markleeberg, DE;

Jan Hoentschel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01); H01L 21/20 (2006.01); H01L 21/337 (2006.01); H01L 23/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

In a replacement gate approach, the semiconductor material or at least a significant portion thereof in a non-transistor structure, such as a precision resistor, an electronic fuse and the like, may be preserved upon replacing the semiconductor material in the gate electrode structures. To this end, an appropriate dielectric material may be provided at least prior to the removal of the semiconductor material in the gate electrode structures, without requiring significant modifications of established replacement gate approaches.


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