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Dresden, Germany

Thilo Scheiper

USPTO Granted Patents = 72 (Patent Applications = 23)

Average Co-Inventor Count = 3.0

ph-index = 10

Forward Citations = 333(Granted Patents)

Forward Citations (Not Self Cited) = 329(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Dortmund, DE (2014)
Dresden, DE (2011 - 2016)

Company Filing History:

67 out of 5,671

Globalfoundries Inc.

Globalfoundries Singapore Pte. Ltd.

2 out of 12,883

Advanced Micro Devices Corporation

Years Active: 2011-2016

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Areas of Expertise:

Semiconductor Devices

High-K Metal Gate Electrode Structures

Transistor Fabrication

Integrated Circuits

P-Channel Transistors

Self-Aligned Fin Transistors

Strain-Inducing Regions

Flash Memory Transistors

Silicon-Germanium Layers

Canyon Gate Transistors

Dual Metal Silicide Regions

Stressed Semiconductor Wafers

72 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9490361 - Canyon gate transistor and methods for its fabrication (2016-11-08),

2. 9490344 - Methods of making transistor devices with elevated source/drain regions to accommodate consumption during metal silicide formation process (2016-11-08),

3. 9490189 - Semiconductor device comprising a stacked die configuration including an integrated peltier element (2016-11-08),

4. 9425052 - Reduced threshold voltage-width dependency in transistors comprising high-K metal gate electrode structures (2016-08-23),

5. 9184095 - Contact bars with reduced fringing capacitance in a semiconductor device (2015-11-10),

6. 9082662 - SOI semiconductor device comprising a substrate diode and a film diode formed by using a common well implantation mask (2015-07-14),

7. 9054207 - Field effect transistors for a flash memory comprising a self-aligned charge storage region (2015-06-09),

8. 9048336 - Reduced threshold voltage-width dependency in transistors comprising high-k metal gate electrode structures (2015-06-02),

9. 9040403 - Methods for fabricating integrated circuits having gate to active and gate to gate interconnects (2015-05-26),

10. 9023696 - Method of forming contacts for devices with multiple stress liners (2015-05-05),

11. 8987104 - Method of forming spacers that provide enhanced protection for gate electrode structures (2015-03-24),

12. 8975704 - Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations (2015-03-10),

13. 8936977 - Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations (2015-01-20),

14. 8916433 - Superior integrity of high-k metal gate stacks by capping STI regions (2014-12-23),

15. 8872285 - Metal gate structure for semiconductor devices (2014-10-28),

Title: The Innovations of Thilo Scheiper: A Pioneer in Semiconductor Technologies

Introduction: Thilo Scheiper, based in Dresden, Germany, is a noteworthy inventor with a remarkable portfolio consisting of 72 patents. His contributions significantly impact the semiconductor industry, particularly in enhancing device efficiency and performance.

Latest Patents: Among his most recent inventions is a semiconductor device featuring a stacked die configuration that includes an integrated Peltier element. This innovative approach involves controlling the temperature within the semiconductor by employing a metal-based heat sink and heat source to manage current flow during specific operating phases. Another significant patent from Scheiper details methods for manufacturing transistor devices with elevated source/drain regions. These methodologies address challenges associated with metal silicide formation processes, allowing for improved performance and reliability of semiconductor devices.

Career Highlights: Thilo Scheiper has demonstrated his expertise through his work with prominent companies such as GlobalFoundries Inc. and GlobalFoundries Singapore Pte. Ltd. His role at these organizations has allowed him to contribute substantially to cutting-edge semiconductor research and development.

Collaborations: Throughout his career, Scheiper has collaborated with notable colleagues, including Jan Hoentschel and Stefan Flachowsky. Their collective efforts have propelled advancements in technology, particularly in the field of semiconductor design and manufacturing.

Conclusion: Thilo Scheiper's impressive array of patents and his collaborative spirit underscore his stature as a key figure in semiconductor innovations. His advancements not only improve device functionality but also pave the way for future developments in this rapidly evolving technology sector.

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