The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Apr. 03, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY (US);
Inventors:
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/76224 (2013.01); H01L 21/76895 (2013.01); H01L 21/76897 (2013.01);
Abstract
Methods are provided for fabricating an integrated circuit that includes gate to active contacts. One method includes forming a dummy gate structure including a dummy gate electrode having sidewalls and overlying a semiconductor substrate and first and second sidewall spacers on the sidewalls of the dummy gate electrode. The method includes removing the dummy gate electrode to form a trench bounded by the first and second sidewall spacers. The method removes an upper portion of the first sidewall spacer and deposits a layer of metal in the trench and over a remaining portion of the first sidewall spacer to form a gate electrode and an interconnect.