Stefan Flachowsky

USPTO Granted Patents = 109 (Patent Applications = 42)

Average Co-Inventor Count = 2.9

ph-index = 9

Forward Citations = 339(Granted Patents)

Inventors with similar research interests:

Company Filing History:

Globalfoundries Singapore Pte. Ltd.

patents

2 out of 4,804

Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V.

where one patent can have more than one assignee

Years Active: 2011-2022

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109 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11424253 - Device including a floating gate electrode and a layer of ferroelectric material and method for the formation thereof (2022-08-23),

2. 10340380 - Three-dimensional transistor with improved channel mobility (2019-07-02),

3. 10084057 - NVM device in SOI technology and method of fabricating an according device (2018-09-25),

4. 10056376 - Ferroelectric FinFET (2018-08-21),

5. 9966466 - Semiconductor-on-insulator wafer, semiconductor structure including a transistor, and methods for the formation and operation thereof (2018-05-08),

6. 9899417 - Semiconductor structure including a first transistor and a second transistor (2018-02-20),

7. 9865608 - Method of forming a device including a floating gate electrode and a layer of ferroelectric material (2018-01-09),

8. 9685457 - Method including a formation of a transistor and semiconductor structure including a first transistor and a second transistor (2017-06-20),

9. 9583240 - Temperature independent resistor (2017-02-28),

10. 9515155 - E-fuse design for high-K metal-gate technology (2016-12-06),

11. 9490361 - Canyon gate transistor and methods for its fabrication (2016-11-08),

12. 9490344 - Methods of making transistor devices with elevated source/drain regions to accommodate consumption during metal silicide formation process (2016-11-08),

13. 9484407 - Methods of forming a nanowire transistor device (2016-11-01),

14. 9472642 - Method of forming a semiconductor device structure and such a semiconductor device structure (2016-10-18),

15. 9449972 - Ferroelectric FinFET (2016-09-20),

Title: Unveiling the Inventive Mind of Stefan Flachowsky

Introduction:

Stefan Flachowsky, a brilliant inventor hailing from Dresden, DE, has established himself as a trailblazer in the realm of semiconductor technology. With an impressive portfolio of 109 patents to his name, his groundbreaking innovations have significantly influenced the field of electronics.

Latest Patents:

1. Device including a floating gate electrode and a layer of ferroelectric material: This patent showcases an illustrative device comprising a semiconductor substrate with innovative features such as a floating gate electrode and a layer of ferroelectric material.

2. Three-dimensional transistor with improved channel mobility: Flachowsky's inventive semiconductor device introduces a common gate structure positioned above a dielectric material layer, demonstrating enhanced channel mobility.

Career Highlights:

Flachowsky's remarkable career has seen him contribute significantly to renowned companies such as Globalfoundries Inc. and Globalfoundries Singapore Pte. Ltd. His expertise and innovative spirit have played a pivotal role in driving technological advancements in the semiconductor industry.

Collaborations:

Throughout his journey, Flachowsky has collaborated with esteemed professionals in the field, including Jan Hoentschel and Thilo Scheiper. Together, they have worked tirelessly to push the boundaries of semiconductor technology and bring forth cutting-edge solutions.

Conclusion:

In conclusion, Stefan Flachowsky's unparalleled dedication to innovation and his relentless pursuit of excellence have solidified his position as a visionary inventor. His impactful patents and fruitful collaborations stand as a testament to his creative brilliance and unwavering commitment to shaping the future of electronics.

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42 patents pending:

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