The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 25, 2018

Filed:

Aug. 16, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Sven Beyer, Dresden, DE;

Martin Trentzsch, Radebeul, DE;

Stefan Flachowsky, Dresden, DE;

Axel Henke, Medingen, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/01 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 21/0228 (2013.01); H01L 21/02266 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H01L 29/0642 (2013.01); H01L 29/517 (2013.01);
Abstract

The present disclosure provides in one aspect a semiconductor device including a substrate structure comprising an active semiconductor material formed over a base substrate and a buried insulating material formed between the active semiconductor material and the base substrate, a ferroelectric gate structure disposed over the active semiconductor material in an active region of the substrate structure, the ferroelectric gate structure comprising a gate electrode and a ferroelectric material layer, and a contact region formed in the base substrate under the ferroelectric gate structure.


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