Martin Trentzsch

This inventor holds 26 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Advanced Micro Devices Corporation. Active years: 2010-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Martin Trentzsch. Retrieved from https://idiyas.com/inventor/martin-trentzsch

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 26 (Patent Applications = 6)

% Patents Active = 69.2

Average Co-Inventor Count = 3.4

ph-index = 4

Forward Citations = 72(Granted Patents)

Location History:

Dresden, DE (2010 - 2018)
Radebeul, DE (2014 - 2018)

Company Filing History:

Advanced Micro Devices Corporation

patents

Years Active: 2010-2018

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Areas of Expertise:

Ferro-FET Device

Non-Volatile Memory

Field-Inducing Structure

FinFET

High-K Dielectric

Semiconductor Resistor

Gate Current Leakage

Transistor Fabrication

Charge Traps

CMOS Device

Lithography Techniques

Oxidation Process

26 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10163933 - Ferro-FET device with buried buffer/ferroelectric layer stack (2018-12-25),

2. 10084057 - NVM device in SOI technology and method of fabricating an according device (2018-09-25),

3. 9508588 - Methods for fabricating integrated circuits with isolation regions having uniform step heights (2016-11-29),

4. 9236482 - Semiconductor device with field-inducing structure (2016-01-12),

5. 9064900 - FinFET method comprising high-K dielectric (2015-06-23),

6. 8993459 - Method of forming a material layer in a semiconductor structure (2015-03-31),

7. 8872285 - Metal gate structure for semiconductor devices (2014-10-28),

8. 8823138 - Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof (2014-09-02),

9. 8735253 - Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process (2014-05-27),

10. 8735240 - CET and gate current leakage reduction in high-k metal gate electrode structures by heat treatment after diffusion layer removal (2014-05-27),

11. 8658490 - Passivating point defects in high-K gate dielectric layers during gate stack formation (2014-02-25),

12. 8609482 - Enhancing interface characteristics between a channel semiconductor alloy and a gate dielectric by an oxidation process (2013-12-17),

13. 8525289 - Adjusting threshold voltage for sophisticated transistors by diffusing a gate dielectric cap layer material prior to gate dielectric stabilization (2013-09-03),

14. 8486786 - Enhancing uniformity of a channel semiconductor alloy by forming STI structures after the growth process (2013-07-16),

15. 8445344 - Uniform high-k metal gate stacks by adjusting threshold voltage for sophisticated transistors by diffusing a metal species prior to gate patterning (2013-05-21),

Title: Martin Trentzsch - Innovative Inventor from Dresden

Introduction: Martin Trentzsch is a renowned inventor hailing from Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Martin Trentzsch holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Martin Trentzsch has worked with leading research institutions and companies to develop cutting-edge solutions that have revolutionized industries worldwide.

Collaborations: Throughout his career, Martin Trentzsch has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence that has led to numerous successful projects and inventions.

Conclusion: Martin Trentzsch's passion for innovation and his dedication to pushing the boundaries of technology make him a true pioneer in the world of inventions, with a legacy that continues to inspire future generations of inventors.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

6 patents pending: