The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jul. 08, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Matthias Goldbach, Dresden, DE;
Martin Trentzsch, Radebeul, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/823821 (2013.01); H01L 29/785 (2013.01); H01L 27/0924 (2013.01);
Abstract
The present disclosure provides for semiconductor device structures and methods for forming semiconductor device structures, wherein a field-inducing structure is provided lower than an active portion of a fin along a height dimension of that fin, the height dimension extending in parallel to a normal direction of a semiconductor substrate surface in which the fin is formed. The field-inducing structure hereby implements a permanent field effect below the active portion. The active portion of the fin is to be understood as a portion of the fin covered by a gate dielectric.