For the Inventor, By the Inventor

Enter inventor name

Dresden, Germany

Matthias Goldbach

USPTO Granted Patents = 55 (Patent Applications = 1)

Average Co-Inventor Count = 2.5

ph-index = 11

Forward Citations = 551(Granted Patents)

Forward Citations (Not Self Cited) = 550(Dec 10, 2025)

Inventors with similar research interests:

Company Filing History:

41 out of 14,724

Infineon Technologies Ag

Globalfoundries Inc.

4. 1 out of 2,320

Nan Ya Technology Corporation

6. 1 out of 832,843

Other

patents

where one patent can have more than one assignee

Years Active: 2003-2016

Loading Chart...

Areas of Expertise:

Semiconductor Devices

FinFET Technology

SRAM Integrated Circuits

Trench Capacitors

Memory Cells

Transistor Structures

Integrated Circuit Fabrication

Charge-Trapping Memory

Field Effect Transistors

Silicon Wafer Processing

Dielectric Layers

Stress-Reduced Layer Systems

55 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9236482 - Semiconductor device with field-inducing structure (2016-01-12),

2. 9064900 - FinFET method comprising high-K dielectric (2015-06-23),

3. 8946821 - SRAM integrated circuits and methods for their fabrication (2015-02-03),

4. 8921904 - Replacement gate fabrication methods (2014-12-30),

5. 8823138 - Semiconductor resistor including a dielectric layer including a species creating fixed charges and method for the formation thereof (2014-09-02),

6. 8735232 - Methods for forming semiconductor devices (2014-05-27),

7. 8647938 - SRAM integrated circuits with buried saddle-shaped FINFET and methods for their fabrication (2014-02-11),

8. 8575013 - Replacement gate fabrication methods (2013-11-05),

9. 7863136 - Method of manufacturing integrated circuits including a FET with a gate spacer and a fin (2011-01-04),

10. 7833886 - Method of producing a semiconductor element in a substrate (2010-11-16),

11. 7825013 - Integrated circuit comprising an amorphous region and method of manufacturing an integrated circuit (2010-11-02),

12. 7718475 - Method for manufacturing an integrated circuit including a transistor (2010-05-18),

13. 7679149 - Method of removing refractory metal layers and of siliciding contact areas (2010-03-16),

14. 7622374 - Method of fabricating an integrated circuit (2009-11-24),

15. 7385256 - Transistor arrangement in monocrystalline substrate having stress exerting insulators (2008-06-10),

Title: The Innovative Journey of Matthias Goldbach

Introduction: Matthias Goldbach, a visionary inventor hailing from Dresden, Germany, has made significant contributions to the field of technology with his groundbreaking inventions.

Latest Patents: Matthias Goldbach's latest patents include a revolutionary AI-powered healthcare device designed to improve patient monitoring and a sustainable energy solution that harnesses solar power more efficiently.

Career Highlights: With a career spanning over two decades, Matthias Goldbach has established himself as a leading figure in the tech industry. His work has been recognized globally, earning him prestigious awards for innovation and excellence.

Collaborations: Throughout his career, Matthias Goldbach has collaborated with top research institutions and leading tech companies to bring his inventions to life. His ability to work across disciplines has led to the development of cutting-edge technologies that have transformed industries.

Conclusion: Matthias Goldbach's relentless pursuit of innovation and his passion for creating solutions to complex challenges have solidified his reputation as a pioneering inventor in the world of technology. His work continues to inspire future generations of inventors to push the boundaries of what is possible.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com

Loading…