The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2014
Filed:
Nov. 29, 2011
Peter Baars, Dresden, DE;
Matthias Goldbach, Dresden, DE;
Peter Baars, Dresden, DE;
Matthias Goldbach, Dresden, DE;
GlobalFoundries, Inc., Grand Cayman, KY;
Abstract
Methods are provided for forming semiconductor devices. One method includes etching trenches into a silicon substrate and filling the trenches with an insulating material to delineate a plurality of spaced apart silicon fins. Dummy gate structures are formed, which includes a first dummy gate structure, that overlie and are transverse to the fins. A back fill material is filled between the dummy gate structures. The first dummy gate structure and an upper portion of the insulating material are removed to expose an active fins portion of the fins. The active fins portion is dimensionally modified to form an altered active fins portion. A high-k dielectric material and a work function determining gate electrode material are deposited overlying the altered active fins portion.