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Peter Baars

This inventor holds 109 USPTO granted patents and 28 published patent applications and 3 EPO patents, primarily in Semiconductor Devices (CPC class H01L21-84). Top assignees: Globalfoundries Inc., Qimonda Ag, Globalfoundries U.S. Inc.. Active years: 2008-2026.

USPTO Granted Patents = 109 (Patent Applications = 28)

% Patents Active = 59.6

EPO Patents = 3 (Patent Applications = 10)

Average Co-Inventor Count = 2.7

ph-index = 9

Forward Citations = 315(Granted Patents)

Forward Citations (Not Self Cited) = 292(Dec 10, 2025)

Inventors with similar research interests:

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Location History:

Dredsen, DE (2017)
Dresden, DE (2008 - 2024)

Company Filing History:

Globalfoundries U.S. Inc.

patents

4. 2 out of 15,016

Infineon Technologies Ag

patents

5. 1 out of 15

Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.

Years Active: 2008-2026

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Areas of Expertise:

Transistor Integration

Silicon-On-Insulator

High Voltage MOSFET

Field Effect Transistors

FinFET Technology

Buried Capacitive Structures

Nonvolatile Memory Cells

Integrated Circuits

Device Manufacturing Techniques

Spacer Integration

Contact Enhancement Layer

Stacked Circuits

109 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12751216 - Gate arrangement for quantum dot structures (2026-09-29),

2. 12690206 - Heterojunction bipolar transistors including an intrinsic base with an asymmetrical dopant depth profile (2026-07-21),

3. 12113070 - Transistor integration on a silicon-on-insulator substrate (2024-10-08),

4. 11916109 - Bipolar transistor structures with base having varying horizontal width and methods to form same (2024-02-27),

5. 11888062 - Extended-drain metal-oxide-semiconductor devices with a silicon-germanium layer beneath a portion of the gate (2024-01-30),

6. 11705455 - High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) (2023-07-18),

7. 11532742 - Integrated circuit structure with metal gate and metal field plate having coplanar upper surfaces (2022-12-20),

8. 11456364 - Structure and method to provide conductive field plate over gate structure (2022-09-27),

9. 11289598 - Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors (2022-03-29),

10. 11217678 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2022-01-04),

11. 11195935 - Semiconductor device with novel spacer structures having novel configurations (2021-12-07),

12. 10923579 - Semiconductor device with interconnect to source/drain (2021-02-16),

13. 10727236 - Circuits constructed from stacked field-effect transistors (2020-07-28),

14. 10707330 - Semiconductor device with interconnect to source/drain (2020-07-07),

15. 10522655 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dial raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2019-12-31),

Title: Innovations and Achievements of Inventor Peter Baars

Introduction: Peter Baars, an accomplished inventor based in Dresden, Germany, holds an impressive portfolio of 107 patents. His work focuses on advanced semiconductor technologies, contributing significantly to the field of electronics through innovative designs and methodologies.

Latest Patents: Among his recent patents are groundbreaking innovations such as "Transistor integration on a silicon-on-insulator substrate" and "Structures including a vertical heterojunction bipolar transistor and methods of forming a structure including a vertical heterojunction bipolar transistor." These patents detail complex semiconductor structures, including a trench in the substrate, a multi-layer framework of semiconductor and dielectric materials, and configurations for vertical heterojunction bipolar transistors. His other notable invention, "Bipolar transistor structures with base having varying horizontal width and methods to form same," presents a novel approach to bipolar transistor design, highlighting a base layer with a unique spatial configuration to enhance performance.

Career Highlights: Over the course of his career, Peter Baars has made remarkable contributions while working with leading companies in the semiconductor industry. Noteworthy among them are Globalfoundries Inc., a global leader in semiconductor manufacturing, and Qimonda AG, recognized for its innovations in memory technologies. His extensive experience in these organizations has played a pivotal role in shaping his inventive capabilities.

Collaborations: Throughout his journey, Baars has collaborated with distinguished professionals in the field, including colleagues Till Schloesser and Klaus Muemmler. These partnerships have fostered a rich exchange of ideas and contributed to the successful development of his patented technologies.

Conclusion: Peter Baars exemplifies the spirit of innovation, with his extensive patent portfolio and significant collaborations highlighting the impact of his contributions. His work continues to influence the future of semiconductor technologies, reinforcing the importance of creative minds in driving advancements in the industry.

Profile summary based on public USPTO records.

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