The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 29, 2022
Filed:
Apr. 15, 2020
Applicant:
Globalfoundries Dresden Module One Limited Liability Company & Co. KG, Dresden, DE;
Inventors:
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/12 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7824 (2013.01); H01L 27/088 (2013.01); H01L 27/1207 (2013.01); H01L 29/0653 (2013.01); H01L 29/66659 (2013.01); H01L 29/7835 (2013.01);
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to co-integrated high voltage and medium voltage devices and methods of manufacture. The structure includes a substrate having a semiconductor on insulator (SOI) region and a bulk region; and a first device formed on the bulk region, the first device having a first gate dielectric layer and a second gate dielectric layer surrounding the first dielectric layer, and a thickness of the first gate dielectric layer and the second gate dielectric layer being greater than a thickness of an insulator layer of the SOI region.