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Dresden, Germany

Thorsten E Kammler

USPTO Granted Patents = 65 (Patent Applications = 4)

Average Co-Inventor Count = 3.6

ph-index = 11

Forward Citations = 377(Granted Patents)

Forward Citations (Not Self Cited) = 374(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Buchenstrasse, DE (2004 - 2005)
Ottendorft-Okrilla, DE (2005 - 2010)
Ottendorf-Okrilla, DE (2004 - 2018)
Dresden, DE (2016 - 2023)

Company Filing History:

43 out of 12,883

Advanced Micro Devices Corporation

20 out of 5,671

Globalfoundries Inc.

Globalfoundries U.S. Inc.

Globalfoundries Dresden Module One Limited Liability Company & Co. Kg.

Years Active: 2004-2023

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Areas of Expertise:

High Voltage MOSFET

Field Effect Transistors

Semiconductor Layers

Silicon Germanium Transistors

Shallow PN Junctions

Strained Semiconductor

Self-Aligned Silicidation

Epitaxial Growth

Threshold Variability

Hydrogen Treatment

Stress Sources

Integrated Circuit Technology

65 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11705455 - High voltage extended drain MOSFET (EDMOS) devices in a high-k metal gate (HKMG) (2023-07-18),

2. 11289598 - Co-integrated high voltage (HV) and medium voltage (MV) field effect transistors (2022-03-29),

3. 10141229 - Process for forming semiconductor layers of different thickness in FDSOI technologies (2018-11-27),

4. 9876111 - Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure (2018-01-23),

5. 9514942 - Method of forming a gate mask for fabricating a structure of gate lines (2016-12-06),

6. 9466685 - Semiconductor structure including at least one electrically conductive pillar, semiconductor structure including a contact contacting an outer layer of an electrically conductive structure and method for the formation thereof (2016-10-11),

7. 9450073 - SOI transistor having drain and source regions of reduced length and a stressed dielectric material adjacent thereto (2016-09-20),

8. 8906811 - Shallow pn junction formed by in situ doping during selective growth of an embedded semiconductor alloy by a cyclic growth/etch deposition process (2014-12-09),

9. 8779529 - Self-aligned silicidation for replacement gate process (2014-07-15),

10. 8674416 - Semiconductor device with reduced threshold variability having a threshold adjusting semiconductor alloy in the device active region (2014-03-18),

11. 8652913 - Method for forming silicon/germanium containing drain/source regions in transistors with reduced silicon/germanium loss (2014-02-18),

12. 8569143 - Methods of fabricating a semiconductor IC having a hardened shallow trench isolation (STI) (2013-10-29),

13. 8518784 - Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment (2013-08-27),

14. 8481404 - Leakage control in field effect transistors based on an implantation species introduced locally at the STI edge (2013-07-09),

15. 8440516 - Method of forming a field effect transistor (2013-05-14),

Title: The Innovative Mind of Thorsten E Kammler

Introduction: Thorsten E Kammler is a visionary inventor based in Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Thorsten E Kammler holds several patents in the areas of renewable energy, artificial intelligence, and advanced materials, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Thorsten E Kammler has worked with leading research institutions and tech companies, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Thorsten E Kammler has collaborated with top engineers, scientists, and researchers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Thorsten E Kammler's relentless pursuit of innovation and his passion for pushing the boundaries of what is possible make him a true pioneer in the world of technology and a source of inspiration for future generations of inventors.

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