The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2013
Filed:
Dec. 29, 2009
Stephan Kronholz, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Gunda Beernink, Dresden, DE;
Carsten Reichel, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Thorsten Kammler, Ottendorf-Okrilla, DE;
Gunda Beernink, Dresden, DE;
Carsten Reichel, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
The threshold voltage of a sophisticated transistor may be adjusted by providing a specifically designed semiconductor alloy in the channel region of the transistor, wherein a negative effect of this semiconductor material with respect to inducing a strain component in the channel region may be reduced or over-compensated for by additionally incorporating a strain-adjusting species. For example, a carbon species may be incorporated in the channel region, the threshold voltage of which may be adjusted on the basis of a silicon/germanium alloy of a P-channel transistor. Consequently, sophisticated metal gate electrodes may be formed in an early manufacturing stage.