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For the Inventor, By the Inventor

Dresden, Germany

Stephan Kronholz

USPTO Granted Patents = 69 

Average Co-Inventor Count = 3.0

ph-index = 7

Forward Citations = 177(Granted Patents)

Forward Citations (Not Self Cited) = 160(Oct 12, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal61 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal6 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal1 out of 302 
 
Forschungszentrum Julich Gmbh
 patents
4. 1 out of 24 
 
Advance Micro Devices, Inc.
 patents

Years Active: 2010-2017

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69 patents (USPTO):
1. 9548378 - Epitaxial channel formation methods and structures (2017-01-17),
2. 9484459 - Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer (2016-11-01),
3. 9269631 - Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch process (2016-02-23),
4. 9263582 - Strain engineering in semiconductor devices by using a piezoelectric material (2016-02-16),
5. 9224863 - Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer (2015-12-29),
6. 9029919 - Methods of forming silicon/germanium protection layer above source/drain regions of a transistor and a device having such a protection layer (2015-05-12),
7. 9018065 - Horizontal epitaxy furnace for channel SiGe formation (2015-04-28),
8. 9006835 - Transistor with embedded Si/Ge material having reduced offset and superior uniformity (2015-04-14),
9. 8987144 - High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer (2015-03-24),
10. 8969916 - Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode (2015-03-03),
11. 8969190 - Methods of forming a layer of silicon on a layer of silicon/germanium (2015-03-03),
12. 8939765 - Reduction of defect rates in PFET transistors comprising a Si/Ge semiconductor material formed by epitaxial growth (2015-01-27),
13. 8884379 - Strain engineering in semiconductor devices by using a piezoelectric material (2014-11-11),
14. 8847404 - Three-dimensional semiconductor device comprising an inter-die connection on the basis of functional molecules (2014-09-30),
15. 8835209 - Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areas (2014-09-16),

Title: The Innovative Journey of Stephan Kronholz

Introduction: Stephan Kronholz, a visionary inventor hailing from Dresden, Germany, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents: Stephan Kronholz holds several patents in the areas of renewable energy technologies, smart devices, and sustainable materials. His most recent patent involves a revolutionary method for harnessing solar energy more efficiently.

Career Highlights: With a background in engineering and a passion for sustainability, Stephan Kronholz has led numerous research projects that have resulted in cutting-edge inventions. His dedication to creating solutions for a greener future has earned him recognition in the industry.

Collaborations: Throughout his career, Stephan Kronholz has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work in multidisciplinary teams has led to the successful development of innovative products.

Conclusion: Stephan Kronholz's relentless pursuit of innovation and commitment to sustainability continue to inspire the next generation of inventors. His impact on the technological landscape is profound, and his legacy is sure to endure for years to come.

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