The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 29, 2015
Filed:
May. 30, 2012
Peter Javorka, Radeburg, DE;
Stephan Kronholz, Dresden, DE;
Gunda Beernink, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
In sophisticated semiconductor devices, transistors may be formed on the basis of a high-k metal gate electrode structure provided in an early manufacturing phase, wherein an efficient strain-inducing mechanism may be implemented by using an embedded strain-inducing semiconductor alloy. In order to reduce the number of lattice defects and provide enhanced etch resistivity in a critical zone, i.e., in a zone in which a threshold voltage adjusting semiconductor alloy and the strain-inducing semiconductor material are positioned in close proximity, an efficient buffer material or seed material, such as a silicon material, is incorporated, which may be accomplished during the selective epitaxial growth process.