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Radeburg, Germany

Peter Javorka

USPTO Granted Patents = 63 (Patent Applications = 17)

Average Co-Inventor Count = 3.4

ph-index = 6

Forward Citations = 129(Granted Patents)

Forward Citations (Not Self Cited) = 128(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Radeburg, DE (2011 - 2020)
Dresden, DE (2008 - 2022)

Company Filing History:

56 out of 5,671

Globalfoundries Inc.

5 out of 12,883

Advanced Micro Devices Corporation

Globalfoundries U.S. Inc.

Years Active: 2008-2025

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Areas of Expertise:

Field-Effect Transistor

Transistor Performance Enhancement

FDSOI Technology

Three-Dimensional Transistor

Multi-Gate FETs

Integrated Circuits

High-K Metal Gate

Silicon-Germanium Materials

Gate Electrode Structures

Strained Semiconductor Materials

VLSI CMOS Technologies

Ion Implantation Techniques

63 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12328926 - Structures for a field-effect transistor that include a spacer structure (2025-06-10),

2. 11387364 - Transistor with phase transition material region between channel region and each source/drain region (2022-07-12),

3. 10643885 - FDSOI channel control by implanted high-k buried oxide (2020-05-05),

4. 10340380 - Three-dimensional transistor with improved channel mobility (2019-07-02),

5. 10049917 - FDSOI channel control by implanted high-K buried oxide (2018-08-14),

6. 9876111 - Method of forming a semiconductor device structure using differing spacer widths and the resulting semiconductor device structure (2018-01-23),

7. 9484459 - Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer (2016-11-01),

8. 9472642 - Method of forming a semiconductor device structure and such a semiconductor device structure (2016-10-18),

9. 9412859 - Contact geometry having a gate silicon length decoupled from a transistor length (2016-08-09),

10. 9412848 - Methods of forming a complex GAA FET device at advanced technology nodes (2016-08-09),

11. 9406565 - Methods for fabricating integrated circuits with semiconductor substrate protection (2016-08-02),

12. 9401423 - Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer (2016-07-26),

13. 9391176 - Multi-gate FETs having corrugated semiconductor stacks and method of forming the same (2016-07-12),

14. 9373720 - Three-dimensional transistor with improved channel mobility (2016-06-21),

15. 9373509 - FINFET doping method with curvilnear trajectory implantation beam path (2016-06-21),

Title: The Innovative Journey of Peter Javorka

Introduction: Peter Javorka, a talented inventor hailing from Radeburg, Germany, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents: Peter Javorka holds several patents in the areas of renewable energy, sustainable transportation, and smart home technologies, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: Throughout his career, Peter Javorka has been recognized for his ability to transform complex concepts into practical solutions. His inventions have not only improved efficiency in various industries but have also had a positive impact on the environment.

Collaborations: Peter Javorka has collaborated with leading research institutions and technology companies to further develop his inventions and bring them to the market. His partnerships have been instrumental in turning his ideas into reality.

Conclusion: Peter Javorka's passion for innovation and his dedication to creating a better future through technology make him a standout figure in the world of inventors. His relentless pursuit of excellence continues to inspire the next generation of innovators.

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