The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2016
Filed:
Feb. 06, 2015
Globalfoundries Inc., Grand Cayman, KY;
Ralf Richter, Radebeul, DE;
Peter Javorka, Radeburg, DE;
Jan Hoentschel, Dresden, DE;
Stefan Flachowsky, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
The present disclosure provides a method of forming a semiconductor device and a semiconductor device. An SOI substrate portion having a semiconductor layer, a buried insulating material layer and a bulk substrate is provided, wherein the buried insulating material layer is interposed between the semiconductor layer and the bulk substrate. The SOI substrate portion is subsequently patterned so as to form a patterned bi-layer stack on the bulk substrate, which bi-layer stack comprises a patterned semiconductor layer and a patterned buried insulating material layer. The bi-layer stack is further enclosed with a further insulating material layer and an electrode material is formed on and around the further insulating material layer. Herein a gate electrode is formed by the bulk substrate and the electrode material such that the gate electrode substantially surrounds a channel portion formed by a portion of the patterned buried insulating material layer.