The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Nov. 03, 2020
Transistor with phase transition material region between channel region and each source/drain region
Globalfoundries U.s. Inc., Santa Clara, CA (US);
Avinash Lahgere, Bangalore, IN;
Prashanth Paramahans Manik, Bangalore, IN;
Peter Javorka, Dresden, DE;
Ali Icel, Cupertino, CA (US);
Mohit Bajaj, Bangalore, IN;
GlobalFoundries U.S. Inc., Santa Clara, CA (US);
Abstract
A transistor includes a semiconductor substrate, a first source/drain region and a second source/drain region in the semiconductor substrate with a channel region between the source/drain regions, and a gate over the channel region. In addition, the transistor includes a first phase transition material (PTM) region between the first source/drain region and the channel region, and a second PTM region between the second source/drain region and the channel region. The PTM regions provide the transistor with improved off-state current (I) without affecting the on-state current (I), and thus an improved I/Iratio. The transition threshold of PTM regions from dielectric to conductor can be customized based on, for example, PTM material type, doping therein, and/or strain therein.