The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 02, 2016

Filed:

Mar. 15, 2013
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Peter Javorka, Radeburg, DE;

Ralf Richter, Radebeul, DE;

Jan Hoentschel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/266 (2006.01); H01L 21/8238 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823418 (2013.01); H01L 21/26513 (2013.01); H01L 21/823412 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/26586 (2013.01); H01L 29/6656 (2013.01);
Abstract

Methods for fabricating an integrated circuit are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming a gate electrode structure overlying a semiconductor substrate. A first sacrificial oxide layer is formed overlying the semiconductor substrate and a first implant mask is patterned overlying the first sacrificial oxide layer to expose a portion of the first sacrificial oxide layer adjacent the gate electrode structure. Conductivity determining ions are implanted into the semiconductor substrate, through the first sacrificial oxide layer. The first implant mask and the first sacrificial oxide layer are removed after implanting the conductivity determining ions into the semiconductor substrate.


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