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For the Inventor, By the Inventor

Dresden, Germany

Gunda Beernink

USPTO Granted Patents = 11 

Average Co-Inventor Count = 3.3

ph-index = 3

Forward Citations = 17(Granted Patents)


Company Filing History:

goldMedal8 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal3 out of 12,867 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2012-2016

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11 patents (USPTO):
1. 9484459 - Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer (2016-11-01),
2. 9224863 - Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer (2015-12-29),
3. 8835209 - Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areas (2014-09-16),
4. 8765559 - Sophisticated gate electrode structures formed by cap layer removal with reduced loss of embedded strain-inducing semiconductor material (2014-07-01),
5. 8674458 - Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process (2014-03-18),
6. 8614122 - Formation of a channel semiconductor alloy by forming a hard mask layer stack and applying a plasma-based mask patterning process (2013-12-24),
7. 8518784 - Adjusting of strain caused in a transistor channel by semiconductor material provided for threshold adjustment (2013-08-27),
8. 8466520 - Transistor with an embedded strain-inducing material having a gradually shaped configuration (2013-06-18),
9. 8361858 - Reduction of thickness variations of a threshold semiconductor alloy by reducing patterning non-uniformities prior to depositing the semiconductor alloy (2013-01-29),
10. 8338274 - Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration (2012-12-25),
11. 8202777 - Transistor with an embedded strain-inducing material having a gradually shaped configuration (2012-06-19),

Title: Gunda Beernink: Innovator in Semiconductor Technology

Introduction

Gunda Beernink is a prominent inventor based in Dresden, Germany, known for her significant contributions to semiconductor technology. With a total of 11 patents to her name, she has made remarkable advancements in the performance enhancement of transistors.

Latest Patents

Her latest patents focus on innovative methods for improving transistor performance through the use of embedded strain-inducing semiconductor materials. One notable patent describes a semiconductor device that includes drain and source regions positioned in an active region of a transistor. The design features a channel region that incorporates a semiconductor base material and a threshold voltage adjusting semiconductor material. Additionally, a gate electrode structure is positioned on the threshold voltage adjusting semiconductor material, while a strain-inducing semiconductor alloy is embedded in the semiconductor base material. This innovative approach aims to enhance the efficiency and performance of sophisticated semiconductor devices.

Career Highlights

Throughout her career, Gunda has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and Advanced Micro Devices Corporation. Her expertise in the field has allowed her to develop cutting-edge technologies that push the boundaries of what is possible in semiconductor design and manufacturing.

Collaborations

Gunda has collaborated with notable professionals in her field, including Stephan Kronholz and Vassilios Papageorgiou. These collaborations have fostered an environment of innovation and have contributed to the successful development of

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