The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 25, 2012

Filed:

Dec. 29, 2009
Applicants:

Stephan Kronholz, Dresden, DE;

Vassilios Papageorgiou, Austin, TX (US);

Gunda Beernink, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Inventors:

Stephan Kronholz, Dresden, DE;

Vassilios Papageorgiou, Austin, TX (US);

Gunda Beernink, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

In sophisticated semiconductor devices, an asymmetric transistor configuration may be obtained on the basis of a strain-inducing semiconductor alloy. To this end, strain relaxation implantation processes may be performed at the drain side according to some illustrative embodiments, while, in other cases, the deposition of the strain-inducing alloy may be performed in an asymmetric manner with respect to the drain side and the source side of the transistor.


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