Vassilios Papageorgiou

USPTO Granted Patents = 24 (Patent Applications = 3)

Average Co-Inventor Count = 3.3

ph-index = 5

Forward Citations = 168(Granted Patents)

Location History:

Dresden, DE (2012)
Austin, TX (US) (2007 - 2016)

Company Filing History:

Advanced Micro Devices Corporation

patents

1 out of 24

Advance Micro Devices, Inc.

patents

Years Active: 2007-2016

where 'Filed Patents' based on already Granted Patents

24 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9449826 - Graded well implantation for asymmetric transistors having reduced gate electrode pitches (2016-09-20),

2. 9269631 - Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch process (2016-02-23),

3. 9035306 - Adjusting configuration of a multiple gate transistor by controlling individual fins (2015-05-19),

4. 8969916 - Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode (2015-03-03),

5. 8828819 - Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode (2014-09-09),

6. 8772878 - Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material (2014-07-08),

7. 8735253 - Adjusting of a non-silicon fraction in a semiconductor alloy during transistor fabrication by an intermediate oxidation process (2014-05-27),

8. 8664049 - Semiconductor element formed in a crystalline substrate material and comprising an embedded in situ doped semiconductor material (2014-03-04),

9. 8530894 - Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions (2013-09-10),

10. 8466520 - Transistor with an embedded strain-inducing material having a gradually shaped configuration (2013-06-18),

11. 8450124 - Adjusting configuration of a multiple gate transistor by controlling individual fins (2013-05-28),

12. 8357573 - Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode (2013-01-22),

13. 8338274 - Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration (2012-12-25),

14. 8278174 - In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile (2012-10-02),

15. 8227266 - Test structure for monitoring process characteristics for forming embedded semiconductor alloys in drain/source regions (2012-07-24),

Title: The Innovative Journey of Vassilios Papageorgiou

Introduction

Vassilios Papageorgiou, based in Austin, TX, is a prominent inventor known for his significant contributions to the semiconductor industry. With a remarkable portfolio of 24 patents, his work has paved the way for advancements in transistor technology and manufacturing processes. His innovative spirit and technical expertise have made him a key player in the electronics field.

Latest Patents

Among his latest patents is the "Graded well implantation for asymmetric transistors having reduced gate electrode pitches." This invention addresses complexities in semiconductor devices by utilizing an asymmetric transistor configuration achieved through an innovative well implantation process. It cleverly avoids the challenges associated with tilted implantation, allowing for a non-tilted implantation process that enhances performance regardless of the technology standard employed.

Another significant patent is the "Integration of semiconductor alloys in PMOS and NMOS transistors by using a common cavity etch process." This invention focuses on the incorporation of strain-inducing semiconductor alloys into the drain and source areas of various transistors. By leveraging a common manufacturing sequence for cavity patterning, the etching process is conducted with high uniformity, simplifying the overall manufacturing process and reducing the need for multiple lithography steps.

Career Highlights

Vassilios has worked with leading companies in the semiconductor sector, including Globalfoundries Inc. and Advanced Micro Devices Corporation. Throughout his career, he has demonstrated exceptional skill in semiconductor device engineering, contributing to groundbreaking projects and innovations.

Collaborations

Throughout his career, Vassilios has collaborated with numerous professionals in the field, including notable coworkers like Jan Hoentschel and Stephan Kronholz. These collaborations have facilitated the exchange of ideas and expertise, further advancing semiconductor technology and enhancing the innovative output of their respective organizations.

Conclusion

Vassilios Papageorgiou's dedication to innovation and his extensive patent portfolio exemplify his significant impact on the semiconductor industry. His recent inventive contributions continue to shape the landscape of electronics, showcasing his commitment to pushing the boundaries of technology. As he progresses in his career, further advancements from his work are anticipated in the continuously evolving field of semiconductor devices.

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