The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2015

Filed:

Apr. 24, 2013
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Jan Hoentschel, Dresden, DE;

Robert Mulfinger, Dresden, DE;

Vassilios Papageorgiou, Austin, TX (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/58 (2013.01); H01L 21/845 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01); H01L 2924/0002 (2013.01);
Abstract

In a sophisticated semiconductor device, FINFET elements may be provided with individually accessible semiconductor fins which may be connected to a controllable interconnect structure for appropriately adjusting the transistor configuration, for instance with respect to current drive capability, replacing defective semiconductor fins and the like. Consequently, different transistor configurations may be obtained on the basis of a standard transistor cell architecture, which may result in increased production yield of highly complex manufacturing strategies in forming non-planar transistor devices.


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