The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 2012
Filed:
Jan. 18, 2010
Jan Hoentschel, Dresden, DE;
Vassilios Papageorgiou, Austin, TX (US);
Uwe Griebenow, Markkleeberg, DE;
Jan Hoentschel, Dresden, DE;
Vassilios Papageorgiou, Austin, TX (US);
Uwe Griebenow, Markkleeberg, DE;
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The dopant profile of a transistor may be obtained on the basis of an in situ doped strain-inducing semiconductor alloy wherein a graded dopant concentration may be established along the height direction. Consequently, the semiconductor alloy may be positioned in close proximity to the channel region, thereby enhancing the overall strain-inducing efficiency, while not unduly compromising the finally obtained dopant profile. Furthermore, additional implant species may be incorporated prior to selectively growing the semiconductor alloy, thereby avoiding implantation-induced relaxation of the internal strain.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile