The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2016
Filed:
Jan. 25, 2010
G Robert Mulfinger, Dresden, DE;
Andy Wei, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Vassilios Papageorgiou, Austin, TX (US);
G Robert Mulfinger, Dresden, DE;
Andy Wei, Dresden, DE;
Jan Hoentschel, Dresden, DE;
Vassilios Papageorgiou, Austin, TX (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
In sophisticated semiconductor devices, an asymmetric transistor configuration may be obtained on the basis of an asymmetric well implantation while avoiding a tilted implantation process. For this purpose, a graded implantation mask may be formed, such as a graded resist mask, which may have a higher ion blocking capability at the drain side compared to the source side of the asymmetric transistor. For instance, the asymmetric configuration may be obtained on the basis of a non-tilted implantation process with a high degree of performance gain and may be accomplished irrespective of the technology standard under consideration.