The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Jan. 25, 2012
Stephan Kronholz, Dresden, DE;
Gunda Beernink, Dresden, DE;
Markus Lenski, Dresden, DE;
Frank Seliger, Dresden, DE;
Frank Richter, Dresden, DE;
Stephan Kronholz, Dresden, DE;
Gunda Beernink, Dresden, DE;
Markus Lenski, Dresden, DE;
Frank Seliger, Dresden, DE;
Frank Richter, Dresden, DE;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
When forming sophisticated gate electrode structures, such as high-k metal gate electrode structures, an appropriate encapsulation may be achieved, while also undue material loss of a strain-inducing semiconductor material that is provided in one type of transistor may be avoided. To this end, the patterning of the protective spacer structure prior to depositing the strain-inducing semiconductor material may be achieved for each type of transistor on the basis of the same process flow, while, after the deposition of the strain-inducing semiconductor material, an etch stop layer may be provided so as to preserve integrity of the active regions.