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For the Inventor, By the Inventor

Dresden, Germany

Markus Lenski

USPTO Granted Patents = 58 

 

Average Co-Inventor Count = 3.7

ph-index = 9

Forward Citations = 607(Granted Patents)

Forward Citations (Not Self Cited) = 599(Dec 10, 2025)


Inventors with similar research interests:


Company Filing History:

goldMedal44 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal14 out of 12,883 
 
Advanced Micro Devices Corporation
 patents

Years Active: 2006-2019

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Areas of Expertise:
Semiconductor Structures
High-K Metal Gate Electrode
Transistor Strain Enhancement
Integrated Circuit Fabrication
Dielectric Material Deposition
CMOS Device Manufacturing
Dopant Profile Tuning
Three-Dimensional Semiconductor Devices
Heat Dissipation Techniques
Silicide Regions Formation
Isolation Structure Optimization
Molecular Storage Elements
58 patents (USPTO):Explore Patents
1. 10483154 - Front-end-of-line device structure and method of forming such a front-end-of-line device structure (2019-11-19),
2. 9646838 - Method of forming a semiconductor structure including silicided and non-silicided circuit elements (2017-05-09),
3. 9184260 - Methods for fabricating integrated circuits with robust gate electrode structure protection (2015-11-10),
4. 8987144 - High-K metal gate electrode structures formed by cap layer removal without sacrificial spacer (2015-03-24),
5. 8987103 - Multi-step deposition of a spacer material for reducing void formation in a dielectric material of a contact level of a semiconductor device (2015-03-24),
6. 8969916 - Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode (2015-03-03),
7. 8871586 - Methods of reducing material loss in isolation structures by introducing inert atoms into oxide hard mask layer used in growing channel semiconductor material (2014-10-28),
8. 8847404 - Three-dimensional semiconductor device comprising an inter-die connection on the basis of functional molecules (2014-09-30),
9. 8847205 - Spacer for a gate electrode having tensile stress and a method of forming the same (2014-09-30),
10. 8835298 - NiSi rework procedure to remove platinum residuals (2014-09-16),
11. 8835209 - Complementary transistors comprising high-k metal gate electrode structures and epitaxially formed semiconductor materials in the drain and source areas (2014-09-16),
12. 8828819 - Strain enhancement in transistors comprising an embedded strain-inducing semiconductor alloy by creating a patterning non-uniformity at the bottom of the gate electrode (2014-09-09),
13. 8815674 - Methods of forming a semiconductor device by performing a wet acid etching process while preventing or reducing loss of active area and/or isolation regions (2014-08-26),
14. 8772843 - Oxide deposition by using a double liner approach for reducing pattern density dependence in sophisticated semiconductor devices (2014-07-08),
15. 8765586 - Methods of forming metal silicide regions on semiconductor devices (2014-07-01),

Title: Markus Lenski - Innovative Inventor from Dresden

Introduction: Markus Lenski is a renowned inventor hailing from Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Markus Lenski holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his versatility and forward-thinking approach.

Career Highlights: With over two decades of experience in the innovation industry, Markus Lenski has worked with leading research institutions and companies to develop cutting-edge solutions that have revolutionized the way we approach modern challenges.

Collaborations: Throughout his career, Markus Lenski has collaborated with top engineers, scientists, and designers, fostering a culture of creativity and excellence that has led to numerous successful projects and inventions.

Conclusion: Markus Lenski's passion for innovation and his dedication to pushing the boundaries of technology make him a true pioneer in the field of inventing, with a legacy that continues to inspire future generations of inventors.

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