The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2014
Filed:
Dec. 20, 2011
Applicants:
Clemens Fitz, Dresden, DE;
Peter Baars, Dresden, DE;
Markus Lenski, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
Disclosed herein are various methods of forming metal silicide regions on semiconductor devices. In one example, the method includes forming a sacrificial gate structure above a semiconducting substrate, performing a selective metal silicide formation process to form metal silicide regions in source/drain regions formed in or above the substrate, after forming the metal silicide regions, removing the sacrificial gate structure to define a gate opening and forming a replacement gate structure in the gate opening, the replacement gate structure comprised of at least one metal layer.