The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2014

Filed:

Jul. 15, 2011
Applicants:

Stephan Kronholz, Dresden, DE;

Markus Lenski, Dresden, DE;

Kerstin Ruttloff, Hainichen, DE;

Volker Jaschke, Radebeul, DE;

Inventors:

Stephan Kronholz, Dresden, DE;

Markus Lenski, Dresden, DE;

Kerstin Ruttloff, Hainichen, DE;

Volker Jaschke, Radebeul, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/02 (2006.01); H01L 21/31 (2006.01); H01L 21/461 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/02126 (2013.01); H01L 21/823871 (2013.01); H01L 21/022 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 29/6656 (2013.01); H01L 21/823864 (2013.01); H01L 29/7848 (2013.01); H01L 29/66636 (2013.01);
Abstract

A silicon dioxide material may be provided in sophisticated semiconductor devices in the form of a double liner including an undoped silicon dioxide material in combination with a high density plasma silicon dioxide, thereby providing reduced dependency on pattern density. In some illustrative embodiments, the silicon dioxide double liner may be used as a spacer material and as a hard mask material in process strategies for incorporating a strain-inducing semiconductor material.


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