The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 24, 2015
Filed:
Aug. 04, 2011
Applicants:
Stephan Kronholz, Dresden, DE;
Markus Lenski, Dresden, DE;
Hans-juergen Thees, Dresden, DE;
Inventors:
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/8238 (2006.01); H01L 21/311 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 21/3115 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823864 (2013.01); H01L 21/31116 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 29/165 (2013.01); H01L 29/6656 (2013.01); H01L 29/6659 (2013.01); H01L 29/66636 (2013.01); H01L 29/7834 (2013.01); H01L 29/7843 (2013.01); H01L 29/7848 (2013.01); H01L 21/31155 (2013.01); H01L 29/6653 (2013.01);
Abstract
In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an additional liner material after the selective deposition of a strain-inducing semiconductor material in selected active regions. Moreover, the dielectric cap materials of the gate electrode structures may be removed on the basis of a process flow that significantly reduces the degree of material erosion in isolation regions and active regions by avoiding the patterning and removal of any sacrificial oxide spacers.