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Dresden, Germany

Hans-Juergen Thees

This inventor holds 30 USPTO granted patents and 7 published patent applications, primarily in Power Semiconductor Devices. Top assignees: Globalfoundries Inc., Infineon Technologies Ag, Globalfoundries U.S. Inc.. Active years: 2014-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Juergen Thees. Retrieved from https://idiyas.com/inventor/hans-juergen-thees

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 63.3

Average Co-Inventor Count = 2.6

ph-index = 4

Forward Citations = 44(Granted Patents)


Company Filing History:

goldMedal20 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal6 out of 15,027 
 
Infineon Technologies Ag
 patents
bronzeMedal2 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
4. 2 out of 61 
 
Infineon Technologies Dresden Gmbh & Co . Kg
 patents

Years Active: 2014-2025

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Areas of Expertise:
Power Semiconductor Device
Voltage-Controlled Switching
Control Cell
Trench Structures
Electrode Trench
Isolation Trench
Nonvolatile Memory Cell
Metal Silicide Regions
Epitaxial Formation
Gate Electrode Structures
STI Topography
Implant Masking Layers
30 patents (USPTO):Explore Patents
1. 12501669 - Mesa contact for MOS controlled power semiconductor device (2025-12-16),
2. 12266718 - Voltage-controlled switching device with channel region (2025-04-01),
3. 12087816 - Power semiconductor device having a control cell for controlling a load current (2024-09-10),
4. 11742417 - Power semiconductor device including first and second trench structures (2023-08-29),
5. 11728420 - Mesa contact for a power semiconductor device and method of producing a power semiconductor device (2023-08-15),
6. 11322587 - Method of processing a power semiconductor device (2022-05-03),
7. 11195942 - Semiconductor device including electrode trench structure and isolation trench structure and manufacturing method therefore (2021-12-07),
8. 11195935 - Semiconductor device with novel spacer structures having novel configurations (2021-12-07),
9. 10971599 - Power semiconductor device with self-aligned source region (2021-04-06),
10. 10923579 - Semiconductor device with interconnect to source/drain (2021-02-16),
11. 10707330 - Semiconductor device with interconnect to source/drain (2020-07-07),
12. 10475901 - Cap removal for gate electrode structures with reduced complexity (2019-11-12),
13. 10062619 - Air gap spacer implant for NZG reliability fix (2018-08-28),
14. 9953876 - Method of forming a semiconductor device structure and semiconductor device structure (2018-04-24),
15. 9793294 - [object Object] (2017-10-17),

Title: Hans-Juergen Thees - Innovative Inventor from Dresden

Introduction: Hans-Juergen Thees is a renowned inventor hailing from Dresden, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hans-Juergen Thees holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a career spanning over two decades, Hans-Juergen Thees has worked with leading research institutions and tech companies, spearheading projects that have revolutionized industries and improved the quality of life for many.

Collaborations: Throughout his career, Hans-Juergen Thees has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Hans-Juergen Thees continues to be a driving force in the world of inventions, inspiring the next generation of inventors to push the boundaries of what is possible and create a better world for all.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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