The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2019
Filed:
Apr. 19, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hans-Juergen Thees, Dresden, DE;
Peter Baars, Dresden, DE;
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 27/11 (2006.01); H01L 21/3105 (2006.01); H01L 29/786 (2006.01); H01L 29/08 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6653 (2013.01); H01L 21/266 (2013.01); H01L 21/31053 (2013.01); H01L 21/31144 (2013.01); H01L 27/1112 (2013.01); H01L 29/0847 (2013.01); H01L 29/78621 (2013.01); H01L 21/31116 (2013.01); H01L 21/76283 (2013.01); H01L 29/66757 (2013.01); H01L 29/66772 (2013.01);
Abstract
The present disclosure relates to manufacturing techniques and respective semiconductor devices in which the capping material of gate electrode structures may be removed together with portions of the capping material of resistors on the basis of a highly controllable directional etch process, wherein raised drain and source regions may be protected on the basis of a fill material.