The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Feb. 10, 2022
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Hans-Juergen Thees, Dresden, DE;

Alim Karmous, Dresden, DE;

Anton Mauder, Kolbermoor, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H02M 1/08 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H02M 1/08 (2013.01); H03K 17/567 (2013.01);
Abstract

A voltage-controlled switching device includes a drain/drift region of a first conductivity type formed in a semiconductor portion. A channel region and the drain/drift region are in direct contact with each other. A source region of a second conductivity type and the channel region are in direct contact with each other. A gate electrode and the channel region are capacitively coupled and configured such that, in a an on-state of the voltage-controlled switching device, a first enhancement region of charge carriers corresponding to the first conductivity type forms in the channel region and band-to-band tunneling is facilitated between the source region and the first enhancement region.


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