Anton Mauder

Kolbermoor, Germany

Anton Mauder

This inventor holds 305 USPTO granted patents and 51 published patent applications and 5 EPO patents, primarily in Power Semiconductors (CPC class H01L29-7813). Top assignees: Infineon Technologies Austria Ag, Infineon Technologies Ag, Infineon Technologies Dresden Gmbh. Active years: 2002-2026.

USPTO Granted Patents = 305 

% Patents Active = 67.5

 

Average Co-Inventor Count = 3.5

ph-index = 12

Forward Citations = 742(Granted Patents)

Forward Citations (Not Self Cited) = 601(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Kilbermoor, DE (2013)
  • Kolbemoor, DE (2016)
  • Kolbermoor, DE (2002 - 2024)

Company Filing History:


Years Active: 2002-2026

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Areas of Expertise:
Semiconductor Devices
Silicon Carbide
Gate Driver Circuit
Power Diode
Voltage-Controlled Switching
Integrated Temperature Protection
Short Circuit Protection
Nanometer-Scale Structure
Edge Termination
Electrostatic Discharge
Current Measurement
Bond Wire
305 patents (USPTO):Explore Patents

Title: Anton Mauder: Pioneering Innovations in Semiconductor Devices and Silicon Carbide Technology

Introduction:

This article explores the commendable work and contributions of Anton Mauder, a renowned inventor and expert in the field of semiconductor devices and silicon carbide technology. With an impressive track record of 288 patents, Mauder has made significant strides in the industry and has played a crucial role in advancing technological advancements in this domain.

Latest Patents:

Among his recent patents, one notable innovation is the "Method for manufacturing a semiconductor device." This method involves the fabrication of a semiconductor device by forming a trench in a semiconductor body and subsequently forming a gate in the trench. Mauder's approach also includes the formation of a body region and the thermal annealing of the semiconductor body to produce desirable pn-junctions at specific depths. This patent demonstrates Mauder's expertise in precise manufacturing techniques and his focus on improving semiconductor device performance.

Another exceptional patent by Mauder is the "Silicon carbide device with trench gate structure and method of manufacturing." This invention showcases Mauder's deep understanding of silicon carbide properties and crystallographic forces. By utilizing specific orientations of column sidewalls and trench gate structures, Mauder has contributed to the development of more efficient and robust silicon carbide devices.

Career Highlights:

Throughout his career, Anton Mauder has worked with industry-leading companies such as Infineon Technologies AG, a semiconductor manufacturing giant. During his tenure at Infineon Technologies AG, Mauder has played a critical role in driving technological advancements and has contributed significantly to the company's success.

Collaborations:

Mauder has collaborated with exceptional individuals in the field, including Hans-Joachim Schulze and Franz Hirler. These collaborations have resulted in groundbreaking discoveries and led to the development of cutting-edge technologies. Through collaborative efforts, Mauder and his peers have pushed the boundaries of innovation, reinforcing their status as leading experts in the semiconductor and silicon carbide fields.

Conclusion:

Anton Mauder's extensive patent portfolio, distinguished career, and collaborations with industry experts reflect his immense contributions in the areas of semiconductor devices and silicon carbide technology. Through his innovative approach and meticulous research, he has paved the way for advancements in the semiconductor industry. Mauder's work continues to inspire and shape the future of technological progress, making him a highly regarded figure in the field of innovations and patents.

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