The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 02, 2024
Filed:
May. 20, 2021
Infineon Technologies Dresden Gmbh & Co. KG, Dresden, DE;
Markus Beninger-Bina, Grosshelfendorf, DE;
Matteo Dainese, Munich, DE;
Ingo Dirnstorfer, Dresden, DE;
Erich Griebl, Dorfen, DE;
Johannes Georg Laven, Taufkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Infineon Technologies Dresden GmbH & Co. KG, Dresden, DE;
Abstract
A power semiconductor device includes: first and second trenches extending from a surface of a semiconductor body along a vertical direction and laterally confining a mesa region along a first lateral direction; source and body regions in the mesa region electrically connected to a first load terminal; and a first insulation layer having a plurality of insulation blocks, two of which laterally confine a contact hole. The first load terminal extends into the contact hole to contact the source and body regions at the mesa region surface. A first insulation block laterally overlaps with the first trench. A second insulation block laterally overlaps with the second trench. The first insulation block has a first lateral concentration profile of a first implantation material of the source region along the first lateral direction that is different from a corresponding second lateral concentration profile for the second insulation block.